FQPF30N06

Fairchild Semiconductor

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FQPF30N06

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Package:

TO-220F-3

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Description:

MOSFET N-CH 60V 21A TO220F

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	945 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	40mOhm @ 10.5A, 10V
Product Status	Obsolete
Supplier Device Package	TO-220F-3
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	60 V
Series	QFET®
Power Dissipation (Max)	39W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube