IMZA120R020M1HXKSA1

Infineon Technologies

Product No:

IMZA120R020M1HXKSA1

Manufacturer:

Package:

PG-TO247-4-8

Batch:

Datasheet:

Description:

SIC DISCRETE

Quantity:

Delivery:

Payment:

In Stock : 208

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3460 nF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	83 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	26.9mOhm @ 41A, 18V
Product Status	Active
Supplier Device Package	PG-TO247-4-8
Vgs(th) (Max) @ Id	5.2V @ 17.6mA
Drain to Source Voltage (Vdss)	1200 V
Series	CoolSiC™
Power Dissipation (Max)	375W (Tc)
Package / Case	TO-247-4
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	98A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	+20V, -5V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Package	Tube