IPB200N15N3GATMA1
Infineon Technologies
Product No:
IPB200N15N3GATMA1
Manufacturer:
Package:
PG-TO263-3
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 150V 50A D2PAK
Quantity:
Delivery:
Payment:
In Stock : 1009
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.8785
$2.8785
10
$2.584
$25.84
100
$2.117075
$211.7075
500
$1.802226
$901.113
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1820 pF @ 75 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 50A, 10V |
| Product Status | Active |
| Supplier Device Package | PG-TO263-3 |
| Vgs(th) (Max) @ Id | 4V @ 90µA |
| Drain to Source Voltage (Vdss) | 150 V |
| Series | OptiMOS™ |
| Power Dissipation (Max) | 150W (Tc) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | IPB200 |
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