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IPBE65R050CFD7AATMA1

Infineon Technologies

Product No:

IPBE65R050CFD7AATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7-3-10

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 45A TO263-7

Quantity:

Delivery:

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Payment:

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In Stock : 1963

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $12.673

    $12.673

  • 10

    $11.16155

    $111.6155

  • 100

    $9.65333

    $965.333

  • 500

    $8.748341

    $4374.1705

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4975 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 102 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 50mOhm @ 24.8A, 10V
Product Status Active
Supplier Device Package PG-TO263-7-3-10
Vgs(th) (Max) @ Id 4.5V @ 1.24mA
Drain to Source Voltage (Vdss) 650 V
Series Automotive, AEC-Q101, CoolMOS™ CFD7A
Power Dissipation (Max) 227W (Tc)
Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPBE65