IPD028N06NF2SATMA1

Infineon Technologies

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IPD028N06NF2SATMA1

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Package:

PG-TO252-3

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Description:

TRENCH 40<-<100V

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In Stock : 1980

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	4600 pF @ 30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	102 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.85mOhm @ 70A, 10V
Product Status	Active
Supplier Device Package	PG-TO252-3
Vgs(th) (Max) @ Id	3.3V @ 80µA
Drain to Source Voltage (Vdss)	60 V
Series	StrongIRFET™2
Power Dissipation (Max)	3W (Ta), 150W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	24A (Ta), 139A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	IPD028