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IPP60R125CPXKSA1

Infineon Technologies

Product No:

IPP60R125CPXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 25A TO220-3

Quantity:

Delivery:

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Payment:

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In Stock : 4948

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $6.3935

    $6.3935

  • 10

    $5.77885

    $57.7885

  • 100

    $4.78439

    $478.439

  • 500

    $4.166168

    $2083.084

  • 1000

    $3.628592

    $3628.592

  • 2000

    $3.494204

    $6988.408

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 125mOhm @ 16A, 10V
Product Status Not For New Designs
Supplier Device Package PG-TO220-3
Vgs(th) (Max) @ Id 3.5V @ 1.1mA
Drain to Source Voltage (Vdss) 650 V
Series CoolMOS™
Power Dissipation (Max) 208W (Tc)
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPP60R125