IPW65R029CFD7XKSA1

Infineon Technologies

Product No:

IPW65R029CFD7XKSA1

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Package:

PG-TO247-3

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Description:

MOSFET N-CH 650V 69A TO247-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	7149 pF @ 400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	145 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	29mOhm @ 35.8A, 10V
Product Status	Active
Supplier Device Package	PG-TO247-3
Vgs(th) (Max) @ Id	4.5V @ 1.79mA
Drain to Source Voltage (Vdss)	650 V
Series	CoolMOS™
Power Dissipation (Max)	305W (Tc)
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	69A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Package	Tube
Base Product Number	IPW65R029