IRLML6302TRPBF

Infineon Technologies

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IRLML6302TRPBF

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Micro3™/SOT-23

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Description:

MOSFET P-CH 20V 780MA SOT23

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	97 pF @ 15 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	3.6 nC @ 4.45 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	600mOhm @ 610mA, 4.5V
Product Status	Not For New Designs
Supplier Device Package	Micro3™/SOT-23
Vgs(th) (Max) @ Id	1.5V @ 250µA
Drain to Source Voltage (Vdss)	20 V
Series	HEXFET®
Power Dissipation (Max)	540mW (Ta)
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	780mA (Ta)
Mfr	Infineon Technologies
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.7V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	IRLML6302