18N20F

Goford Semiconductor

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18N20F

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Package:

TO-220F

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Description:

N200V, 18A,RD<0.19@10V,VTH1.0V~3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	836 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17.7 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	190mOhm @ 9A, 10V
Product Status	Active
Supplier Device Package	TO-220F
Vgs(th) (Max) @ Id	3V @ 250µA
Drain to Source Voltage (Vdss)	200 V
Series	-
Power Dissipation (Max)	110W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube