BSC085N025S G

Infineon Technologies

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BSC085N025S G

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Package:

PG-TDSON-8-1

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Description:

MOSFET N-CH 25V 14A/35A TDSON

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8.5mOhm @ 35A, 10V
Product Status	Obsolete
Supplier Device Package	PG-TDSON-8-1
Vgs(th) (Max) @ Id	2V @ 25µA
Drain to Source Voltage (Vdss)	25 V
Series	OptiMOS™
Power Dissipation (Max)	2.8W (Ta), 52W (Tc)
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	14A (Ta), 35A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)