BSM080D12P2C008

Rohm Semiconductor

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BSM080D12P2C008

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Module

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SIC POWER MODULE-1200V-80A

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Operating Temperature	175°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	800pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	-
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	-
Product Status	Active
Supplier Device Package	Module
Vgs(th) (Max) @ Id	4V @ 13.2mA
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Series	-
Package / Case	Module
Technology	Silicon Carbide (SiC)
Power - Max	600W
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Package	Tray
Base Product Number	BSM080