BSM120D12P2C005

Rohm Semiconductor

Product No:

BSM120D12P2C005

Manufacturer:

Package:

Module

Batch:

Datasheet:

Description:

MOSFET 2N-CH 1200V 120A MODULE

Quantity:

Delivery:

Payment:

In Stock : 19

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds	14000pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	-
Rds On (Max) @ Id, Vgs	-
Product Status	Active
Supplier Device Package	Module
Vgs(th) (Max) @ Id	2.7V @ 22mA
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Series	-
Package / Case	Module
Technology	Silicon Carbide (SiC)
Power - Max	780W
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Package	Bulk
Base Product Number	BSM120