FDFMA3P029Z

Fairchild Semiconductor

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FDFMA3P029Z

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6-MLP (2x2)

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Description:

MOSFET P-CH 30V 3.3A 6MICROFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds	435 pF @ 15 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	87mOhm @ 3.3A, 10V
Product Status	Active
Supplier Device Package	6-MLP (2x2)
Vgs(th) (Max) @ Id	3V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	PowerTrench®
Power Dissipation (Max)	1.4W (Ta)
Package / Case	6-WDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3.3A (Ta)
Mfr	Fairchild Semiconductor
Package	Bulk