FDMC2610

onsemi

Product No:

FDMC2610

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Package:

8-MLP (3.3x3.3)

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Description:

MOSFET N-CH 200V 2.2A/9.5A 8MLP

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	960 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	200mOhm @ 2.2A, 10V
Product Status	Active
Supplier Device Package	8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	200 V
Series	UniFET™
Power Dissipation (Max)	2.1W (Ta), 42W (Tc)
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.2A (Ta), 9.5A (Tc)
Mfr	onsemi
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	FDMC26