FQD2N60CTM-WS

onsemi

Product No:

FQD2N60CTM-WS

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Package:

TO-252AA

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Description:

MOSFET N-CH 600V 1.9A DPAK

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	235 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4.7Ohm @ 950mA, 10V
Product Status	Obsolete
Supplier Device Package	TO-252AA
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	600 V
Series	QFET®
Power Dissipation (Max)	2.5W (Ta), 44W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1.9A (Tc)
Mfr	onsemi
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	FQD2N60