IGLD60R190D1AUMA3

Infineon Technologies

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IGLD60R190D1AUMA3

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Package:

PG-LSON-8-1

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Description:

GAN HV

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	157 pF @ 400 V
FET Type	N-Channel
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	-
Product Status	Active
Supplier Device Package	PG-LSON-8-1
Vgs(th) (Max) @ Id	1.6V @ 960µA
Drain to Source Voltage (Vdss)	600 V
Series	CoolGaN™
Power Dissipation (Max)	62.5W (Tc)
Package / Case	8-LDFN Exposed Pad
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	-10V
Drive Voltage (Max Rds On, Min Rds On)	-
Package	Tape & Reel (TR)