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IPD80R2K7C3AATMA1

Infineon Technologies

Product No:

IPD80R2K7C3AATMA1

Manufacturer:

Infineon Technologies

Package:

D-Pak

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH TO252-3

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 4219

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.444

    $1.444

  • 10

    $1.2996

    $12.996

  • 100

    $1.044715

    $104.4715

  • 500

    $0.858363

    $429.1815

  • 1000

    $0.711218

    $711.218

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 1.5 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.7Ohm @ 1.2A, 10V
Product Status Active
Supplier Device Package D-Pak
Vgs(th) (Max) @ Id 3.9V @ 250µA
Drain to Source Voltage (Vdss) 800 V
Series Automotive, AEC-Q101, CoolMOS™
Power Dissipation (Max) 42W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPD80R2