IRFU9210PBF

Vishay Siliconix

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IRFU9210PBF

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TO-251AA

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Description:

MOSFET P-CH 200V 1.9A TO251AA

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	170 pF @ 25 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	8.9 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	3Ohm @ 1.1A, 10V
Product Status	Active
Supplier Device Package	TO-251AA
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	200 V
Series	-
Power Dissipation (Max)	2.5W (Ta), 25W (Tc)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1.9A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IRFU9210