ISC0802NLSATMA1

Infineon Technologies

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ISC0802NLSATMA1

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PG-TDSON-8-7

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Description:

MOSFET N-CH 100V 22A/150A TDSON

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	5190 pF @ 50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	73 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.6mOhm @ 50A, 10V
Product Status	Active
Supplier Device Package	PG-TDSON-8-7
Vgs(th) (Max) @ Id	2.3V @ 92µA
Drain to Source Voltage (Vdss)	100 V
Series	OptiMOS™ 5
Power Dissipation (Max)	2.5W (Ta), 125W (Tc)
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	22A (Ta), 150A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	ISC0802N