IXFP5N100PM

IXYS

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IXFP5N100PM

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Package:

TO-220 Isolated Tab

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Description:

MOSFET N-CH 1000V 2.3A TO220

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1830 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	33.4 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2.8Ohm @ 2.5A, 10V
Product Status	Active
Supplier Device Package	TO-220 Isolated Tab
Vgs(th) (Max) @ Id	6V @ 250µA
Drain to Source Voltage (Vdss)	1000 V
Series	HiPerFET™, Polar
Power Dissipation (Max)	42W (Tc)
Package / Case	TO-220-3 Full Pack, Isolated Tab
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.3A (Tc)
Mfr	IXYS
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXFP5N100