IXFQ60N50P3

IXYS

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IXFQ60N50P3

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Package:

TO-3P

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Description:

MOSFET N-CH 500V 60A TO3P

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	6250 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	96 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	100mOhm @ 30A, 10V
Product Status	Active
Supplier Device Package	TO-3P
Vgs(th) (Max) @ Id	5V @ 4mA
Drain to Source Voltage (Vdss)	500 V
Series	HiPerFET™, Polar3™
Power Dissipation (Max)	1040W (Tc)
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Mfr	IXYS
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXFQ60