IXTA3N100D2

IXYS

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IXTA3N100D2

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Package:

TO-263AA

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Description:

MOSFET N-CH 1000V 3A TO263

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds	1020 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	37.5 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	5.5Ohm @ 1.5A, 0V
Product Status	Active
Supplier Device Package	TO-263AA
Vgs(th) (Max) @ Id	-
Drain to Source Voltage (Vdss)	1000 V
Series	Depletion
Power Dissipation (Max)	125W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Mfr	IXYS
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	-
Package	Tube
Base Product Number	IXTA3