IXTT68P20T

IXYS

Product No:

IXTT68P20T

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Package:

TO-268AA

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Description:

MOSFET P-CH 200V 68A TO268

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	33400 pF @ 25 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	380 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	55mOhm @ 34A, 10V
Product Status	Active
Supplier Device Package	TO-268AA
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	200 V
Series	TrenchP™
Power Dissipation (Max)	568W (Tc)
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	68A (Tc)
Mfr	IXYS
Vgs (Max)	±15V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXTT68