NTH4L060N090SC1

onsemi

Product No:

NTH4L060N090SC1

Manufacturer:

Package:

TO-247-4L

Batch:

Datasheet:

Description:

SILICON CARBIDE MOSFET, NCHANNEL

Quantity:

Delivery:

Payment:

In Stock : 137

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1770 pF @ 450 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	87 nC @ 15 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	43mOhm @ 20A, 18V
Product Status	Active
Supplier Device Package	TO-247-4L
Vgs(th) (Max) @ Id	4.3V @ 5mA
Drain to Source Voltage (Vdss)	900 V
Series	-
Power Dissipation (Max)	221W (Tc)
Package / Case	TO-247-4
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	46A (Tc)
Mfr	onsemi
Vgs (Max)	+22V, -8V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Package	Tube