NVBG160N120SC1

onsemi

Product No:

NVBG160N120SC1

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Package:

D2PAK-7

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Description:

SICFET N-CH 1200V 19.5A D2PAK

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	678 pF @ 800 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	33.8 nC @ 20 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	224mOhm @ 12A, 20V
Product Status	Active
Supplier Device Package	D2PAK-7
Vgs(th) (Max) @ Id	4.3V @ 2.5mA
Drain to Source Voltage (Vdss)	1200 V
Series	Automotive, AEC-Q101
Power Dissipation (Max)	136W (Tc)
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	19.5A (Tc)
Mfr	onsemi
Vgs (Max)	+25V, -15V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tape & Reel (TR)
Base Product Number	NVBG160