NXPSC08650X6Q

WeEn Semiconductors

Product No:

NXPSC08650X6Q

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Package:

TO-220F

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Description:

DIODE SIL CARBIDE 650V 8A TO220F

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Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Capacitance @ Vr, F	260pF @ 1V, 1MHz
Mounting Type	Through Hole
Product Status	Last Time Buy
Supplier Device Package	TO-220F
Current - Reverse Leakage @ Vr	230 µA @ 650 V
Series	-
Package / Case	TO-220-2 Full Pack, Isolated Tab
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 8 A
Mfr	WeEn Semiconductors
Voltage - DC Reverse (Vr) (Max)	650 V
Package	Tube
Operating Temperature - Junction	175°C (Max)
Current - Average Rectified (Io)	8A
Base Product Number	NXPSC