PMPB11EN,115

Nexperia USA Inc.

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PMPB11EN,115

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Package:

DFN2020MD-6

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Description:

MOSFET N-CH 30V 9A DFN2020MD-6

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	840 pF @ 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20.6 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	14.5mOhm @ 9A, 10V
Product Status	Active
Supplier Device Package	DFN2020MD-6
Vgs(th) (Max) @ Id	2V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	-
Power Dissipation (Max)	1.7W (Ta), 12.5W (Tc)
Package / Case	6-UDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	9A (Ta)
Mfr	Nexperia USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	PMPB11