PMPB95ENEA/FX

NXP Semiconductors

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PMPB95ENEA/FX

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DFN2020MD-6

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NEXPERIA PMPB95ENEA - 80 V, SING

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	504 pF @ 40 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14.9 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	105mOhm @ 2.8A, 10V
Product Status	Active
Supplier Device Package	DFN2020MD-6
Vgs(th) (Max) @ Id	2.7V @ 250µA
Drain to Source Voltage (Vdss)	80 V
Series	Automotive, AEC-Q101
Power Dissipation (Max)	1.6W (Ta)
Package / Case	6-UDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4.1A (Ta)
Mfr	NXP Semiconductors
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk