PSMN4R3-30PL,127

Nexperia USA Inc.

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PSMN4R3-30PL,127

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Package:

TO-220AB

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Description:

MOSFET N-CH 30V 100A TO220AB

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2400 pF @ 12 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	41.5 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	4.3mOhm @ 15A, 10V
Product Status	Active
Supplier Device Package	TO-220AB
Vgs(th) (Max) @ Id	2.15V @ 1mA
Drain to Source Voltage (Vdss)	30 V
Series	-
Power Dissipation (Max)	103W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Mfr	Nexperia USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube
Base Product Number	PSMN4R3