RD3P050SNTL1

Rohm Semiconductor

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RD3P050SNTL1

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Package:

TO-252

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Description:

MOSFET N-CH 100V 5A TO252

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	530 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	190mOhm @ 5A, 10V
Product Status	Active
Supplier Device Package	TO-252
Vgs(th) (Max) @ Id	2.5V @ 1mA
Drain to Source Voltage (Vdss)	100 V
Series	-
Power Dissipation (Max)	15W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	5A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tape & Reel (TR)
Base Product Number	RD3P050