SCTWA60N120G2-4

STMicroelectronics

Product No:

SCTWA60N120G2-4

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Package:

TO-247-4

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Description:

SILICON CARBIDE POWER MOSFET 120

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Operating Temperature	-55°C ~ 200°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1969 pF @ 800 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	94 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	52mOhm @ 30A, 18V
Product Status	Active
Supplier Device Package	TO-247-4
Vgs(th) (Max) @ Id	5V @ 1mA
Drain to Source Voltage (Vdss)	1200 V
Series	-
Power Dissipation (Max)	388W (Tc)
Package / Case	TO-247-4
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	+22V, -10V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube