SI4564DY-T1-GE3

Vishay Siliconix

Product No:

SI4564DY-T1-GE3

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Package:

8-SOIC

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Description:

MOSFET N/P-CH 40V 10A 8SOIC

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	855pF @ 20V
Gate Charge (Qg) (Max) @ Vgs	31nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	17.5mOhm @ 8A, 10V
Product Status	Active
Supplier Device Package	8-SOIC
Vgs(th) (Max) @ Id	2V @ 250µA
Drain to Source Voltage (Vdss)	40V
Series	TrenchFET®
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Power - Max	3.1W, 3.2W
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	10A, 9.2A
Package	Tape & Reel (TR)
Base Product Number	SI4564