SI8410DB-T2-E1

Vishay Siliconix

Product No:

SI8410DB-T2-E1

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Package:

4-Micro Foot (1x1)

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Description:

MOSFET N-CH 20V 4MICRO FOOT

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	620 pF @ 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 8 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	37mOhm @ 1.5A, 4.5V
Product Status	Active
Supplier Device Package	4-Micro Foot (1x1)
Vgs(th) (Max) @ Id	850mV @ 250µA
Drain to Source Voltage (Vdss)	20 V
Series	TrenchFET®
Power Dissipation (Max)	780mW (Ta), 1.8W (Tc)
Package / Case	4-UFBGA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3.8A (Ta)
Mfr	Vishay Siliconix
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI8410