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SIDR668DP-T1-RE3

Vishay Siliconix

Product No:

SIDR668DP-T1-RE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8DC

Batch:

-

Datasheet:

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Description:

N-CHANNEL 100-V (D-S) MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 3000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.7075

    $2.7075

  • 10

    $2.27525

    $22.7525

  • 100

    $1.84072

    $184.072

  • 500

    $1.636223

    $818.1115

  • 1000

    $1.401012

    $1401.012

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5400 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 108 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 4.8mOhm @ 20A, 10V
Product Status Active
Supplier Device Package PowerPAK® SO-8DC
Vgs(th) (Max) @ Id 3.4V @ 250µA
Drain to Source Voltage (Vdss) 100 V
Series TrenchFET® Gen IV
Power Dissipation (Max) 6.25W (Ta), 125W (Tc)
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 23.2A (Ta), 95A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Package Tape & Reel (TR)