SIHP8N50D-GE3

Vishay Siliconix

Product No:

SIHP8N50D-GE3

Manufacturer:

Package:

TO-220AB

Batch:

Datasheet:

Description:

MOSFET N-CH 500V 8.7A TO220AB

Quantity:

Delivery:

Payment:

In Stock : 70

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	527 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	850mOhm @ 4A, 10V
Product Status	Active
Supplier Device Package	TO-220AB
Vgs(th) (Max) @ Id	5V @ 250µA
Drain to Source Voltage (Vdss)	500 V
Series	-
Power Dissipation (Max)	156W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	8.7A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	SIHP8