SIR1309DP-T1-GE3

Vishay Siliconix

Product No:

SIR1309DP-T1-GE3

Manufacturer:

Package:

PowerPAK® SO-8

Batch:

Datasheet:

Description:

P-CHANNEL 30 V (D-S) MOSFET POWE

Quantity:

Delivery:

Payment:

In Stock : 5218

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3250 pF @ 15 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	87 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	7.3mOhm @ 10A, 10V
Product Status	Active
Supplier Device Package	PowerPAK® SO-8
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	TrenchFET® Gen IV
Power Dissipation (Max)	4.8W (Ta), 56.8W (Tc)
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	19.1A (Ta), 65.7A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)