minImg

SIR512DP-T1-RE3

Vishay Siliconix

Product No:

SIR512DP-T1-RE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Batch:

-

Datasheet:

pdf.png

Description:

N-CHANNEL 100 V (D-S) MOSFET POW

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 330

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.938

    $1.938

  • 10

    $1.6131

    $16.131

  • 100

    $1.283545

    $128.3545

  • 500

    $1.086059

    $543.0295

  • 1000

    $0.9215

    $921.5

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3400 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 4.5mOhm @ 20A, 10V
Product Status Active
Supplier Device Package PowerPAK® SO-8
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 100 V
Series -
Power Dissipation (Max) 6W (Ta), 96.2W (Tc)
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 25.1A (Ta), 100A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Package Tape & Reel (TR)