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SIRS700DP-T1-RE3

Vishay Siliconix

Product No:

SIRS700DP-T1-RE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Batch:

-

Datasheet:

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Description:

N-CHANNEL 100 V (D-S) MOSFET POW

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5950 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.5mOhm @ 20A, 10V
Product Status Discontinued at Digi-Key
Supplier Device Package PowerPAK® SO-8
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 100 V
Series TrenchFET® Gen IV
Power Dissipation (Max) 7.4W (Ta),132W (Tc)
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 127A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Package Tape & Reel (TR)