SIS590DN-T1-GE3

Vishay Siliconix

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SIS590DN-T1-GE3

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PowerPAK® 1212-8 Dual

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Description:

COMBO N- & P-CHANNEL 100 V (D-S)

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Configuration	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	265pF 2 50V, 325pF @ 50V
Gate Charge (Qg) (Max) @ Vgs	-
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V
Product Status	Active
Supplier Device Package	PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	100V
Series	TrenchFET®
Package / Case	PowerPAK® 1212-8 Dual
Technology	MOSFET (Metal Oxide)
Power - Max	2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc)
Package	Tape & Reel (TR)
Base Product Number	SIS590