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SISS66DN-T1-GE3

Vishay Siliconix

Product No:

SISS66DN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8S

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 30V 49.1/178.3A PPAK

Quantity:

Delivery:

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Payment:

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In Stock : 5900

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.3775

    $1.3775

  • 10

    $1.1267

    $11.267

  • 100

    $0.87647

    $87.647

  • 500

    $0.742938

    $371.469

  • 1000

    $0.605207

    $605.207

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds 3327 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 85.5 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.38mOhm @ 20A, 10V
Product Status Active
Supplier Device Package PowerPAK® 1212-8S
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series TrenchFET® Gen IV
Power Dissipation (Max) 5.1W (Ta), 65.8W (Tc)
Package / Case PowerPAK® 1212-8S
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 49.1A (Ta), 178.3A (Tc)
Mfr Vishay Siliconix
Vgs (Max) +20V, -16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SISS66