SISS70DN-T1-GE3

Vishay Siliconix

Product No:

SISS70DN-T1-GE3

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Package:

PowerPAK® 1212-8S

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Description:

MOSFET N-CH 125V 8.5A/31A PPAK

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	535 pF @ 62.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15.3 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	29.8mOhm @ 8.5A, 10V
Product Status	Active
Supplier Device Package	PowerPAK® 1212-8S
Vgs(th) (Max) @ Id	4.5V @ 250µA
Drain to Source Voltage (Vdss)	125 V
Series	TrenchFET®
Power Dissipation (Max)	5.1W (Ta), 65.8W (Tc)
Package / Case	PowerPAK® 1212-8S
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	8.5A (Ta), 31A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	SISS70