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STH30N65DM6-7AG

STMicroelectronics

Product No:

STH30N65DM6-7AG

Manufacturer:

STMicroelectronics

Package:

H2PAK-7

Batch:

-

Datasheet:

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Description:

AUTOMOTIVE-GRADE N-CHANNEL 650 V

Quantity:

Delivery:

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Payment:

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In Stock : 235

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $6.308

    $6.308

  • 10

    $5.2953

    $52.953

  • 100

    $4.284025

    $428.4025

  • 500

    $3.808056

    $1904.028

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 115mOhm @ 10A, 10V
Product Status Active
Supplier Device Package H2PAK-7
Vgs(th) (Max) @ Id 4.75V @ 250µA
Drain to Source Voltage (Vdss) 650 V
Series Automotive, AEC-Q101, MDmesh™ DM2
Power Dissipation (Max) 223W (Tc)
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Mfr STMicroelectronics
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)