STP11N65M2

STMicroelectronics

Product No:

STP11N65M2

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Package:

TO-220

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Description:

MOSFET N-CH 650V 7A TO220

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In Stock : 1996

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	410 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12.5 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	670mOhm @ 3.5A, 10V
Product Status	Active
Supplier Device Package	TO-220
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	650 V
Series	MDmesh™ II Plus
Power Dissipation (Max)	85W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	STP11