SUP85N10-10-GE3

Vishay Siliconix

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SUP85N10-10-GE3

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MOSFET N-CH 100V 85A TO220AB

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	6550 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	160 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	10.5mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Drain to Source Voltage (Vdss)	100 V
Series	TrenchFET®
Power Dissipation (Max)	3.75W (Ta), 250W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	85A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube
Base Product Number	SUP85