SUP90100E-GE3

Vishay Siliconix

Product No:

SUP90100E-GE3

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Package:

TO-220AB

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Description:

N-CHANNEL 200 V (D-S) MOSFET TO-

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3930 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	10.9mOhm @ 16A, 10V
Product Status	Active
Supplier Device Package	TO-220AB
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	200 V
Series	TrenchFET®
Power Dissipation (Max)	375W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	150A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Package	Bulk