SSM6L12TU,LF

Toshiba Semiconductor and Storage

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SSM6L12TU,LF

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Package:

UF6

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Description:

MOSFET N/P-CH 30V 500MA UF6

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In Stock : 1980

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Operating Temperature	150°C
FET Feature	-
Configuration	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	245pF @ 10V, 218pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	-
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V
Product Status	Active
Supplier Device Package	UF6
Vgs(th) (Max) @ Id	1.1V @ 100µA
Drain to Source Voltage (Vdss)	30V, 20V
Series	-
Package / Case	6-SMD, Flat Leads
Technology	MOSFET (Metal Oxide)
Power - Max	500mW
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	500mA (Ta)
Package	Tape & Reel (TR)
Base Product Number	SSM6L12