SSM6L35FU(TE85L,F)

Toshiba Semiconductor and Storage

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SSM6L35FU(TE85L,F)

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US6

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MOSFET N/P-CH 20V 0.18A/0.1A US6

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate, 1.2V Drive
Configuration	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	9.5pF @ 3V
Gate Charge (Qg) (Max) @ Vgs	-
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3Ohm @ 50mA, 4V
Product Status	Active
Supplier Device Package	US6
Vgs(th) (Max) @ Id	1V @ 1mA
Drain to Source Voltage (Vdss)	20V
Series	-
Package / Case	6-TSSOP, SC-88, SOT-363
Technology	MOSFET (Metal Oxide)
Power - Max	200mW
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	180mA, 100mA
Package	Tape & Reel (TR)
Base Product Number	SSM6L35