SSM6L35FE,LM

Toshiba Semiconductor and Storage

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SSM6L35FE,LM

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Package:

ES6

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Description:

MOSFET N/P-CH 20V 0.18A/0.1A ES6

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Operating Temperature	150°C (TJ)
FET Feature	Logic Level Gate
Configuration	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	9.5pF @ 3V
Gate Charge (Qg) (Max) @ Vgs	-
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3Ohm @ 50mA, 4V
Product Status	Active
Supplier Device Package	ES6
Vgs(th) (Max) @ Id	1V @ 1mA
Drain to Source Voltage (Vdss)	20V
Series	-
Package / Case	SOT-563, SOT-666
Technology	MOSFET (Metal Oxide)
Power - Max	150mW
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	180mA, 100mA
Package	Tape & Reel (TR)
Base Product Number	SSM6L35